M58CR064P |
RFQ for M58CR064P Required Field |
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| Product | Manufacturers | Pack | D/C |
| M58CR064P | - | BGA | - |
The M58CR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer
programming. In M58CR064C and M58CR064D the VPP pin can also be used as a control pin to provide absolute protection against program or erase. In M58CR064P and M58CR064Q this feature is disabled.
The device features an asymmetrical block architecture.M58CR064 has an array of 135 blocks,and is divided into two banks, Banks A and B. The Dual Bank Architecture allows Dual Operations,while programming or erasing in one bank, Read operations are possible in the other bank. Only one bank at a time is allowed to be in Program or Erase mode. It is possible to perform burst reads that cross bank boundaries. The bank architecture is summarized in Table 2, and the memory maps are shown in Figure 4. The Parameter Blocks are located at the top of the memory address space for the M58CR064C and M58CR064P, and at the bottom for the M58CR064D and M58CR064Q.
Each block can be erased separately. Erase can be suspended, in order to perform program in any other block, and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles using the supply voltage VDD.
Program and Erase commands are written to the Command Interface of the memory. An internal Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC standar
Features |
| ` SUPPLY VOLTAGE VDD = 1.65V to 2V for Program, Erase and Read VDDQ = 1.65V to 3.3V for I/O Buffers VPP = 12V for fast Program (optional)` SYNCHRONOUS / ASYNCHRONOUS READ Synchronous Burst Read mode : 54MHz Asynchronous/ Synchronous Page Read mode Random Access: 85, 90, 100, 120ns`PROGRAMMING TIME 10s by Word typical Double/Quadruple Word Program option` MEMORY BLOCKS Dual Bank Memory Array: 16/48 Mbit Parameter Blocks (Top or Bottom location)` DUAL OPERATIONS Program Erase in one Bank while Read in other No delay between Read and Write operations` BLOCK LOCKING All blocks locked at Power up Any combination of blocks can be locked WP for Block Lock-Down` SECURITY 128 bit user programmable OTP cells 64 bit unique device number One parameter block permanently lockable` COMMON FLASH INTERFACE (CFI)` 100,000 PROGRAM/ERASE CYCLES per BLOCKn ELECTRONIC SIGNATURE Manufacturer Code: 20h Top Device Code, M58CR064C: 88CAh Bottom Device Code, M58CR064D: 88CBh Top Device Code, M58CR064P: 8801h Bottom Device Code, M58CR |
Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied.Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
|
Symbol |
Parameter |
Unit | ||
|
Value | ||||
|
Min |
Max | |||
|
TA |
Ambient Operating Temperature |
-40 |
85 |
°C |
|
TBIAS |
Temperature Under Bias |
-40 |
125 |
°C |
|
TSTG |
Storage Temperature |
-55 |
155 |
°C |
|
VIO |
Input or Output Voltage |
-0.5 |
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